MA2Z0010GL

•硅外延平面型带开关•高击穿电压：VR = 200 V•小端电容•适合高密度安装

反向电压VrReverse Voltage| 200V \---|--- 平均整流电流IoAverage Rectified Current| 100mA/0.1A 最大正向压降VFForward VoltageVf | 1.2V 反向恢复时间TrrReverse Recovery Time| 60ns 最大耗散功率PdPower Dissipation| Description & Applications| Silicon epitAxiAl plAnAr type For switching circuits FeAtures • High breAkdown VoltAge: VR = 200 V • SmAll terminAl cApAcitAnce • SuitAble for high-density mounting 描述与应用| •硅外延平面型带开关 •高击穿电压：VR = 200 V •小端电容 •适合高密度安装

得捷:
DIODE GP 200V 100MA SMINI2-F3