MA2J1140GL

•用于小功率整流硅外延平面型•小s-mini型封装，使高密度安装•高反向电压VR

反向电压VrReverse Voltage| 150V \---|--- 平均整流电流IoAverage Rectified Current| 200mA/0.2A 最大正向压降VFForward VoltageVf | 1.2V 反向恢复时间TrrReverse Recovery Time| 最大耗散功率PdPower Dissipation| Description & Applications| Silicon epitAxiAl plAnAr type For smAll power rectificAtion FeAtures • SmAll S-mini type pAckAge, Allowing high-density mounting • High reVerse VoltAge 描述与应用| •用于小功率整流硅外延平面型 •小s-mini型封装，使高密度安装 •高反向电压VR

得捷:
DIODE GP 150V 200MA SMINI2-F3

Win Source:
DIODE GEN PURP 150V 200MA SMINI2