MBR1100RL

肖特基整流器1.0安培100伏 SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS

. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features

epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,

high- frequency inverters, free wheeling diodes, and polarity protection diodes.

• Low Reverse Current

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

• Guard-Ring for Stress Protection

• Low Forward Voltage

• 150°C Operating Junction Temperature

• High Surge Capacity

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 gram approximately

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case

• Shipped in plastic bags, 1000 per bag

• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number

• Polarity: Cathode Indicated by Polarity Band

• Marking: B1100