MC33153D

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MC33153D概述

IGBT驱动器

The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dual−in−line and surface mount packages.

Features

•High Current Output Stage: 1.0 A Source/2.0 A Sink

•Protection Circuits for Both Conventional and Sense IGBTs

•Programmable Fault Blanking Time

•Protection against Overcurrent and Short Circuit

•Undervoltage Lockout Optimized for IGBT’s

•Negative Gate Drive Capability

•Cost Effectively Drives Power MOSFETs and Bipolar Transistors

•Pb−Free Packages are Available

MC33153D中文资料参数规格
技术参数

电源电压DC 15.0 V, 20.0 V max

上升/下降时间 17 ns

输出接口数 1

耗散功率 560 mW

工作温度Max 105 ℃

工作温度Min 40 ℃

电源电压 11V ~ 20V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Unknown

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

海关信息

ECCN代码 EAR99

数据手册

MC33153D引脚图与封装图
MC33153D引脚图
MC33153D封装图
MC33153D封装焊盘图
在线购买MC33153D
型号: MC33153D
描述:IGBT驱动器
替代型号MC33153D
型号/品牌 代替类型 替代型号对比

MC33153D

ON Semiconductor 安森美

当前型号

当前型号

MC33153DR2

安森美

完全替代

MC33153D和MC33153DR2的区别

MC33153DG

安森美

类似代替

MC33153D和MC33153DG的区别

MC33153DR2G

安森美

类似代替

MC33153D和MC33153DR2G的区别

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