MRF6V2300NBR5

NXP  MRF6V2300NBR5  射频场效应管, MOSFET, N沟道, 110V, TO-272

Overview

The MRF6V2300NR1 and MRF6V2300NBR1 are designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

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## Features

* Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHz

Power Gain: 25.5 dB

Drain Efficiency: 68%

* Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel

**NOTE: PARTS ARE SINGLE–ENDED**

## Features

**NOTE: PARTS ARE SINGLE–ENDED**