高电流互补硅功率晶体管 High-Current Complementary Silicon Power Transistors
50 AMPERE COMPLEMENTARY DARLINGTON POWER TRANSISTORS 60 − 120 VOLTS 300 WATTS
High−Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
•High DC Current Gain − hFE= 1000 Min @ IC= 25 Adc
hFE= 400 Min @ IC= 50 Adc
•Curves to 100 A Pulsed
•Diode Protection to Rated IC
•Monolithic Construction with Built−In Base−Emitter Shunt Resistor
•Junction Temperature to +200C
•Pb−Free Packages are Available额定电压DC 120 V
额定电流 50.0 A
极性 NPN
耗散功率 300 W
击穿电压集电极-发射极 120 V
集电极最大允许电流 50A
最小电流放大倍数hFE 1000 @25A, 5V
最大电流放大倍数hFE 18000
额定功率Max 300 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Through Hole
封装 TO-204-2
长度 38.86 mm
宽度 26.67 mm
高度 8.51 mm
封装 TO-204-2
工作温度 -55℃ ~ 200℃ TJ
产品生命周期 Unknown
包装方式 Tray
最小包装 100
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MJ11032 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJ11032G 安森美 | 类似代替 | MJ11032和MJ11032G的区别 |
MJ11028G 安森美 | 功能相似 | MJ11032和MJ11028G的区别 |
MJ11030G 安森美 | 功能相似 | MJ11032和MJ11030G的区别 |