MJH11021

达林顿互补硅功率晶体管 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Darlington Silicon Power Transistors

These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.

Features

• High DC Current Gain @ 10 Adc — hFE = 400 Min All Types

• Collector−Emitter Sustaining Voltage

   VCEOsus = 150 Vdc Min — MJH11018, 17

                 = 200 Vdc Min — MJH11020, 19

                 = 250 Vdc Min — MJH11022, 21

• Low Collector−Emitter Saturation Voltage

   VCEsat = 1.2 V Typ @ IC = 5.0 A

               = 1.8 V Typ @ IC = 10 A

• Monolithic Construction

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