互补的塑料功率晶体管 Complementary Plastic Power Transistors
SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS
MJD200 NPN
MJD210 PNP
NPN/PNP Silicon DPAK For Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier applications.
Features
•Collector−Emitter Sustaining Voltage − VCEOsus= 25 Vdc Min @ IC= 10 mAdc
•High DC Current Gain − hFE = 70 Min @ IC= 500 mAdc
= 45 Min @ IC= 2 Adc
= 10 Min @ IC= 5 Adc
•Lead Formed for Surface Mount Applications in Plastic Sleeves
No Suffix
•Low Collector−Emitter Saturation Voltage −VCEsat= 0.3 Vdc Max @ IC= 500 mAdc
= 0.75 Vdc Max @ IC= 2.0 Adc
•High Current−Gain − Bandwidth Product −fT= 65 MHz Min @ IC= 100 mAdc
•Annular Construction for Low Leakage −ICBO= 100 nAdc @ Rated VCB
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V
•Pb−Free Packages are Available
额定电压DC 25.0 V
额定电流 5.00 A
极性 NPN
耗散功率 12.5 W
增益频宽积 65 MHz
击穿电压集电极-发射极 25 V
集电极最大允许电流 5A
最小电流放大倍数hFE 45 @2A, 1V
额定功率Max 1.4 W
工作温度Max 150 ℃
工作温度Min 65 ℃
耗散功率Max 1400 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252-3
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MJD200T4 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJD200T4G 安森美 | 类似代替 | MJD200T4和MJD200T4G的区别 |
MJD200G 安森美 | 类似代替 | MJD200T4和MJD200G的区别 |
MJD200RLG 安森美 | 类似代替 | MJD200T4和MJD200RLG的区别 |