偏置电阻晶体管 Bias Resistor Transistor
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
Features
•Simplifies Circuit Design
•Reduces Board Space and Component Count
•Pb−Free Packages are Available
额定电压DC 50.0 V
额定电流 100 mA
极性 NPN
耗散功率 246 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 35 @5mA, 10V
最大电流放大倍数hFE 35
额定功率Max 246 mW
工作温度Max 150 ℃
工作温度Min 55 ℃
安装方式 Surface Mount
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 0.94 mm
封装 SOT-23-3
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 Non-Compliant
含铅标准 Contains Lead
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMUN2211LT3 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMUN2211LT1G 安森美 | 类似代替 | MMUN2211LT3和MMUN2211LT1G的区别 |
MMUN2211LT3G 安森美 | 类似代替 | MMUN2211LT3和MMUN2211LT3G的区别 |
MMUN2211LT1 安森美 | 类似代替 | MMUN2211LT3和MMUN2211LT1的区别 |