MMUN2113LT3

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MMUN2113LT3概述

SOT-23 PNP 50V 100mA

PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel.

MMUN2113LT3中文资料参数规格
技术参数

额定电压DC -50.0 V

额定电流 -100 mA

极性 PNP

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

额定功率Max 246 mW

封装参数

安装方式 Surface Mount

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

其他

产品生命周期 Unknown

包装方式 Tape

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买MMUN2113LT3
型号: MMUN2113LT3
描述:SOT-23 PNP 50V 100mA
替代型号MMUN2113LT3
型号/品牌 代替类型 替代型号对比

MMUN2113LT3

ON Semiconductor 安森美

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当前型号

MMUN2113LT3G

安森美

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MMUN2113LT3和MMUN2113LT3G的区别

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