MICROCHIP MCP14E4-E/P 双路驱动器, MOSFET, 低压侧, 4.5V-18V电源, 4A输出, 50ns延迟, DIP-8
MCP14E3/E4/E5 MOSFET 驱动器
### MOSFET 和 IGBT 驱动器,
欧时:
Microchip MCP14E4-E/P 双 MOSFET 功率驱动器, 4A, 4.5 → 18 V电源, 8引脚 PDIP封装
立创商城:
低边 IGBT MOSFET 灌:4A 拉:4A
得捷:
IC GATE DRVR LOW-SIDE 8DIP
贸泽:
Gate Drivers 4.5A Dual MOSFET Driver
e络盟:
双路驱动器, MOSFET, 低压侧, 4.5V-18V电源, 4A输出, 50ns延迟, DIP-8
艾睿:
Switch on or off your high-power transistors with this MCP14E4-E/P power driver from Microchip Technology. This device has a maximum propagation delay time of 60typ ns and a maximum power dissipation of 1100 mW. Its maximum power dissipation is 1100 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 18 V.
Allied Electronics:
IC MOSFET DVR 4.0A DUAL 8DIP
安富利:
MOSFET DRVR 4A 2-OUT Lo Side Non-Inv 8-Pin PDIP Tube
Chip1Stop:
Driver 4A 2-OUT Low Side Non-Inv Automotive 8-Pin PDIP Tube
TME:
Driver; MOSFET gate driver; 4.5A; Channels:2; 4.5÷18V; DIP8
Newark:
# MICROCHIP MCP14E4-E/P DRIVER, MOSFET, DUAL, 4A, 18V, 8 PDIP
电源电压DC 4.50V min
工作电压 4.5V ~ 18V
上升/下降时间 15ns, 18ns
输出接口数 2
输出电压 18.0 V
输出电流 4.5 A
通道数 2
针脚数 8
耗散功率 1.1 W
上升时间 40ns Max
下降时间 40ns Max
下降时间Max 30 ns
上升时间Max 30 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 1100 mW
电源电压 4.5V ~ 18V
电源电压Max 18 V
电源电压Min 4.5 V
安装方式 Through Hole
引脚数 8
封装 PDIP-8
长度 9.27 mm
宽度 6.35 mm
高度 3.3 mm
封装 PDIP-8
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tube
制造应用 电机驱动与控制, 电源管理, Power Management, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MCP14E4-E/P Microchip 微芯 | 当前型号 | 当前型号 |
MCP14E3-E/P 微芯 | 完全替代 | MCP14E4-E/P和MCP14E3-E/P的区别 |
MCP14E5-E/P 微芯 | 完全替代 | MCP14E4-E/P和MCP14E5-E/P的区别 |
MCP14E3T-E/MF 微芯 | 完全替代 | MCP14E4-E/P和MCP14E3T-E/MF的区别 |