功率MOSFET 300毫安, 60伏 Power MOSFET 300 mA, 60 Volts
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. •Silicon Gate for Fast Switching Speeds •Low Drive Requirement •The SOT−223 Package can be Soldered Using Wave or Reflow •The Formed Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die •Pb−Free Package is Available
额定电压DC 60.0 V
额定电流 300 mA
通道数 1
漏源极电阻 1.7 Ω
极性 N-Channel
耗散功率 800 mW
漏源极电压Vds 60 V
漏源击穿电压 60 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 300 mA
输入电容Ciss 65pF @25VVds
工作温度Max 150 ℃
工作温度Min 65 ℃
耗散功率Max 800mW Ta
安装方式 Surface Mount
封装 TO-261-4
长度 6.5 mm
宽度 3.5 mm
高度 1.57 mm
封装 TO-261-4
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Contains Lead
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MMFT960T1 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMFT960T1G 安森美 | 类似代替 | MMFT960T1和MMFT960T1G的区别 |
MMFT960T3 安森美 | 功能相似 | MMFT960T1和MMFT960T3的区别 |
MMFT960 安森美 | 功能相似 | MMFT960T1和MMFT960的区别 |