D2PAK N-CH 50V 75A
Power MOSFET 75 Amps, 50 Volts
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDSon Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• These devices are available in Pb−free packages. Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local sales office or representative.
额定电压DC 50.0 V
额定电流 75.0 A
极性 N-CH
耗散功率 2.5W Ta, 125W Tc
漏源极电压Vds 50 V
连续漏极电流Ids 75.0 A
上升时间 170 ns
输入电容Ciss 3900pF @25VVds
耗散功率Max 2.5W Ta, 125W Tc
安装方式 Surface Mount
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Bulk
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MTB75N05HDT4 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NTB75N06G 安森美 | 功能相似 | MTB75N05HDT4和NTB75N06G的区别 |
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NTB75N06T4 安森美 | 功能相似 | MTB75N05HDT4和NTB75N06T4的区别 |