MTB75N05HDT4

MTB75N05HDT4图片1
MTB75N05HDT4图片2
MTB75N05HDT4概述

D2PAK N-CH 50V 75A

Power MOSFET 75 Amps, 50 Volts

N−Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDSon Specified at Elevated Temperature

• Short Heatsink Tab Manufactured − Not Sheared

• Specially Designed Leadframe for Maximum Power Dissipation

• These devices are available in Pb−free packages. Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local sales office or representative.

MTB75N05HDT4中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 75.0 A

极性 N-CH

耗散功率 2.5W Ta, 125W Tc

漏源极电压Vds 50 V

连续漏极电流Ids 75.0 A

上升时间 170 ns

输入电容Ciss 3900pF @25VVds

耗散功率Max 2.5W Ta, 125W Tc

封装参数

安装方式 Surface Mount

封装 TO-263-3

外形尺寸

封装 TO-263-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Unknown

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

海关信息

ECCN代码 EAR99

数据手册

在线购买MTB75N05HDT4
型号: MTB75N05HDT4
描述:D2PAK N-CH 50V 75A
替代型号MTB75N05HDT4
型号/品牌 代替类型 替代型号对比

MTB75N05HDT4

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