MICROCHIP MCP14E7-E/P 驱动器, MOSFET, 低压侧, 4.5V-18V电源, 2A输出, 45ns延迟, DIP-8
MCP14E6/E7/E8 MOSFET Drivers
得捷:
IC GATE DRVR LOW-SIDE 8DIP
立创商城:
低边 IGBT MOSFET 灌:2A 拉:2A
欧时:
Microchip MCP14E7-E/P 双 MOSFET 功率驱动器, 2A, 4.5 → 18 V电源, 8引脚 PDIP封装
e络盟:
驱动器, MOSFET, 低压侧, 4.5V-18V电源, 2A输出, 45ns延迟, DIP-8
艾睿:
Change state in a high power transistor by implementing this MCP14E7-E/P power driver by Microchip Technology. This device has a maximum propagation delay time of 65 ns and a maximum power dissipation of 1120 mW. Its maximum power dissipation is 1120 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 4.5 V and a maximum of 18 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C.
Allied Electronics:
IC; MOSFET DRIVER; 2A NON-INVERTING; DUALOUTPUT; -40 TO 125C; PDIP-8
安富利:
MOSFET DRVR 2A 2-OUT Lo Side Non-Inv 8-Pin PDIP Tube
Chip1Stop:
Driver 2A 2-OUT Lo Side Non-Inv Automotive 8-Pin PDIP Tube
TME:
Driver; MOSFET gate driver; 2A; Channels:2; 4.5÷18V; DIP8
Verical:
Driver 2A 2-OUT Low Side Non-Inv Automotive 8-Pin PDIP Tube
Newark:
# MICROCHIP MCP14E7-E/P MOSFET DRIVER, 2A, 8PDIP
电源电压DC 4.50V min
工作电压 4.5V ~ 18V
上升/下降时间 12ns, 15ns
输出接口数 2
输出电流 2 A
通道数 2
针脚数 8
耗散功率 1120 mW
上升时间 35ns Max
下降时间 40ns Max
下降时间Max 35 ns
上升时间Max 30 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 1120 mW
电源电压 4.5V ~ 18V
电源电压Max 18 V
电源电压Min 4.5 V
安装方式 Through Hole
引脚数 8
封装 PDIP-8
长度 10.16 mm
宽度 7.11 mm
高度 4.95 mm
封装 PDIP-8
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tube
制造应用 Automotive, 车用
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MCP14E7-E/P Microchip 微芯 | 当前型号 | 当前型号 |
MCP14E8-E/P 微芯 | 完全替代 | MCP14E7-E/P和MCP14E8-E/P的区别 |
MCP14E6-E/MF 微芯 | 完全替代 | MCP14E7-E/P和MCP14E6-E/MF的区别 |
MCP14E8-E/SN 微芯 | 类似代替 | MCP14E7-E/P和MCP14E8-E/SN的区别 |