MICRON M29W320ET70ZE6E 闪存, 引导块, 非, 32 Mbit, 4M x 8位 / 2M x 16位, CFI, 并行, TFBGA, 48 引脚
The is a 32MB non-volatile Flash Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. On power-up the memory defaults to its Read mode. The M29W320E has an array of 8 parameter and 63 main blocks. M29W320ET locates the Parameter Blocks at the top of the memory address space. M29W320E has an extra 32K word x16 mode or 64 Kbyte x8 mode block, the extended block that can be accessed using a dedicated command. The extended block can be protected and so is useful for storing security information. However the protection is irreversible, once protected the protection cannot be undone. Each block can be erased independently so it is possible to preserve valid data while old data is erased. The blocks can be protected to prevent accidental program or erase commands from modifying the memory. Program and erase commands are written to the command interface of the memory.
电源电压DC 2.70V min
供电电流 10 mA
针脚数 48
位数 8, 16
存取时间 70 ns
内存容量 4000000 B
存取时间Max 70 ns
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 2.7V ~ 3.6V
电源电压Max 3.6 V
电源电压Min 2.7 V
安装方式 Surface Mount
引脚数 48
封装 TFBGA-48
封装 TFBGA-48
工作温度 -40℃ ~ 85℃ TA
产品生命周期 Active
包装方式 Tray
制造应用 Industrial, Consumer Electronics, Computers & Computer Peripherals, Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Elec
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
M29W320ET70ZE6E Micron 镁光 | 当前型号 | 当前型号 |
M29W320DB70ZE6E 镁光 | 完全替代 | M29W320ET70ZE6E和M29W320DB70ZE6E的区别 |
M29DW323DB70ZE6E 镁光 | 完全替代 | M29W320ET70ZE6E和M29DW323DB70ZE6E的区别 |
M29DW323DT70ZE6E 镁光 | 完全替代 | M29W320ET70ZE6E和M29DW323DT70ZE6E的区别 |