MICRON M29W400DB70N6E 闪存, 引导块, 非, 4 Mbit, 512K x 8位 / 256K x 16位, 并行, TSOP, 48 引脚
The is a 4MB non-volatile Flash Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental program or erase commands from modifying the memory. Program and erase commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
电源电压DC 2.70V min
供电电流 10 mA
针脚数 48
位数 8, 16
存取时间 70 ns
内存容量 500000 B
存取时间Max 70 ns
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 2.7V ~ 3.6V
电源电压Max 3.6 V
电源电压Min 2.7 V
安装方式 Surface Mount
引脚数 48
封装 TSOP-48
高度 1 mm
封装 TSOP-48
工作温度 -40℃ ~ 85℃ TA
产品生命周期 Active
包装方式 Tray
制造应用 消费电子产品, 工业, Communications & Networking, Industrial, 通信与网络, Consumer Electronics, 计算机和计算机周边, Computers & Computer Peripherals
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
M29W400DB70N6E Micron 镁光 | 当前型号 | 当前型号 |
M29W400DB70N6F 镁光 | 完全替代 | M29W400DB70N6E和M29W400DB70N6F的区别 |
M29W400DB70N1 镁光 | 类似代替 | M29W400DB70N6E和M29W400DB70N1的区别 |
S29AL004D70TFI020 飞索半导体 | 功能相似 | M29W400DB70N6E和S29AL004D70TFI020的区别 |