M29F010B70K6T

M29F010B70K6T图片1
M29F010B70K6T概述

1兆位128KB X8 ,统一座单电源闪存 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory

SUMMARY DESCRIPTION

The M29F010B is a 1 Mbit 128Kb x8 non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ACCESS TIME: 45ns

■PROGRAMMING TIME

–8µs per Byte typical

■8 UNIFORM 16 Kbytes MEMORY BLOCKS

■PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■LOW POWER CONSUMPTION

– Standby and Automatic Standby

■100,000 PROGRAM/ERASE CYCLES per BLOCK

■20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

M29F010B70K6T中文资料参数规格
技术参数

电源电压DC 5.00 V, 5.50 V max

时钟频率 70.0 GHz

存取时间 70.0 ns

内存容量 1000000 B

工作温度Max 85 ℃

工作温度Min 40 ℃

电源电压 4.5V ~ 5.5V

电源电压Max 5.5 V

电源电压Min 4.5 V

封装参数

安装方式 Surface Mount

引脚数 32

封装 PLCC-32

外形尺寸

封装 PLCC-32

物理参数

工作温度 -40℃ ~ 85℃ TA

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买M29F010B70K6T
型号: M29F010B70K6T
描述:1兆位128KB X8 ,统一座单电源闪存 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
替代型号M29F010B70K6T
型号/品牌 代替类型 替代型号对比

M29F010B70K6T

ST Microelectronics 意法半导体

当前型号

当前型号

M29F010B70K6E

意法半导体

完全替代

M29F010B70K6T和M29F010B70K6E的区别

M29F010B70K6F

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完全替代

M29F010B70K6T和M29F010B70K6F的区别

M29F010B70K6

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类似代替

M29F010B70K6T和M29F010B70K6的区别

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