32兆位4Mb的X8或X16的2Mb ，双银8:24 ，引导块3V电源快闪记忆体 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
SUMMARY DESCRIPTION
The M29DW323D is a 32 Mbit 4Mb x8 or 2Mb x16 non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
FEATURES SUMMARY
■SUPPLY VOLTAGE
–VCC = 2.7V to 3.6V for Program, Erase and Read
–VPP=12V for Fast Program optional
■ACCESS TIME: 70, 90ns
■PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
■MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks Top or Bottom Location
■DUAL OPERATIONS
– Read in one bank while Program or Erase in other
■ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■VPP/WPPIN for FAST PROGRAM and WRITE PROTECT
■TEMPORARY BLOCK UNPROTECTION MODE
■COMMON FLASH INTERFACE
– 64 bit Security Code
■EXTENDED MEMORY BLOCK
– Extra block used as security block or to store additional information
■LOW POWER CONSUMPTION
– Standby and Automatic Standby
■100,000 PROGRAM/ERASE CYCLES per BLOCK
■ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW323DT: 225Eh
– Bottom Device Code M29DW323DB: 225Fh