MJE802

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MJE802概述

达林顿功率晶体管互补 DARLINGTON POWER TRANSISTORS COMPLEMENTARY

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 PNP; and MJE800, , MJE803 NPN are complementary devices.

Features

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High DC Current Gain -

hFE = 2000 Typ @ IC = 2.0 Adc

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Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
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Choice of Packages -

MJE700 and MJE800 series

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Pb-Free Packages are Available
MJE802中文资料参数规格
技术参数

额定电压DC 80.0 V

额定电流 4.00 A

极性 N-Channel

耗散功率 40.0 W

击穿电压集电极-发射极 80.0 V

集电极最大允许电流 4A

最小电流放大倍数hFE 750

封装参数

安装方式 Through Hole

封装 TO-225-3

外形尺寸

封装 TO-225-3

其他

产品生命周期 Unknown

包装方式 Bulk

最小包装 500

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

海关信息

ECCN代码 EAR99

数据手册

在线购买MJE802
型号: MJE802
制造商: ON Semiconductor 安森美
描述:达林顿功率晶体管互补 DARLINGTON POWER TRANSISTORS COMPLEMENTARY
替代型号MJE802
型号/品牌 代替类型 替代型号对比

MJE802

ON Semiconductor 安森美

当前型号

当前型号

MJE802G

安森美

类似代替

MJE802和MJE802G的区别

BD679A

意法半导体

功能相似

MJE802和BD679A的区别

BD679

意法半导体

功能相似

MJE802和BD679的区别

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