FUJITSU MB85RC64APNF-G-JNE1 芯片, 存储器, FRAM, 64KB, I2C, SOP-8
The is a 64kB I²C Ferroelectric Random Access Memory FRAM chip in a configuration of 8192 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64A is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64A has improved to be at least 10¹² cycles, significantly outperforming flash memory and E²PROM in the number. The MB85RC64A does not need a polling sequence after writing to the memory such as the case of Flash memory or E²PROM.
电源电压DC 2.70V min
针脚数 8
存取时间 550 ns
内存容量 8000 B
存取时间Max 550 ns
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 2.7V ~ 3.6V
电源电压Max 3.6 V
电源电压Min 2.7 V
安装方式 Surface Mount
引脚数 8
封装 SOP-8
封装 SOP-8
工作温度 -40℃ ~ 85℃ TA
产品生命周期 Active
包装方式 Cut Tape CT
制造应用 Computers & Computer Peripherals, 工业, Industrial, 计算机和计算机周边
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
香港进出口证 NLR
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MB85RC64APNF-G-JNE1 Fujitsu 富士通 | 当前型号 | 当前型号 |
MB85RC64PNF-G-JNE1 富士通 | 功能相似 | MB85RC64APNF-G-JNE1和MB85RC64PNF-G-JNE1的区别 |