FUJITSU MB85R4002ANC-GE1 芯片, 存储器, FRAM, 4MB, 120NS, TSOP-48
The is a 4MB Ferroelectric Random Access Memory FRAM chip consisting of 262144 words x 16-bit of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4002A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4002A can be used for 10¹⁰ read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E²PROM. The MB85R4002A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
电源电压DC 3.00V min
针脚数 48
存取时间 120 ns
内存容量 500000 B
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 3V ~ 3.6V
电源电压Max 3.6 V
电源电压Min 3 V
安装方式 Surface Mount
引脚数 48
封装 TSOP-48
封装 TSOP-48
工作温度 -40℃ ~ 85℃ TA
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Computers & Computer Peripherals, 计算机和计算机周边, Industrial, Computers & Computer Peripherals, Industrial, 工业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99