FUJITSU MB85RC256VPNF-G-JNE1 芯片, 存储器, FRAM, 256KB, I2C, SOP-8
The is a 256K 32K x 8-bit I²C FRAM Chip in a configuration of 32768 words x 8-bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the non-volatile memory cells. Unlike SRAM, the FRAM chip is able to retain data without using a data backup battery. The read/write endurance of the non-volatile memory cells used for the chip has improved to be at least 1012 cycles, significantly outperforming other non-volatile memory products in the number. This does not need a polling sequence after writing to the memory such as the case of flash memory or E2PROM.
电源电压DC 2.70V min
供电电流 0.25 mA
针脚数 8
内存容量 32000 B
存取时间Max 550 ns
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压Max 5.5 V
电源电压Min 2.7 V
安装方式 Surface Mount
引脚数 8
封装 SOP-8
封装 SOP-8
工作温度 -40℃ ~ 85℃
产品生命周期 Unknown
包装方式 Tube
制造应用 通信与网络, Communications & Networking
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99