MCP14E6/E7/E8 MOSFET Drivers### MOSFET 和 IGBT 驱动器，Microchip
Use this power driver from Technology to power your transistors. This device has a maximum propagation delay time of 65 ns and a maximum power dissipation of 1120 mW. Its maximum power dissipation is 1120 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 4.5 V and a maximum of 18 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
电源电压DC 4.50V min
工作电压 4.5V ~ 18V
上升/下降时间 12ns, 15ns
输出接口数 2
输出电流 2 A
通道数 2
耗散功率 1120 mW
上升时间 35ns Max
下降时间 40ns Max
下降时间Max 35 ns
上升时间Max 30 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 1120 mW
电源电压 4.5V ~ 18V
电源电压Max 18 V
电源电压Min 4.5 V
安装方式 Through Hole
引脚数 8
封装 PDIP-8
长度 10.16 mm
封装 PDIP-8
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MCP14E8-E/P Microchip 微芯 | 当前型号 | 当前型号 |
MCP14E7-E/P 微芯 | 完全替代 | MCP14E8-E/P和MCP14E7-E/P的区别 |
MCP14E6-E/MF 微芯 | 完全替代 | MCP14E8-E/P和MCP14E6-E/MF的区别 |
MCP14E8-E/SN 微芯 | 类似代替 | MCP14E8-E/P和MCP14E8-E/SN的区别 |