MRFE6S9060NR1

NXP  MRFE6S9060NR1  射频场效应管, MOSFET, N沟道, 66V, TO-270

Overview

The is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

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## Features

* Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain: 21.1 dB

Drain Efficiency: 33%

ACPR @ 750 kHz Offset: –45.7 dBc in 30 kHz Bandwidth

* Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness

**GSM EDGE Application**

* Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band 920-960 MHz

Power Gain: 20 dB

Drain Efficiency: 46%

Spectral Regrowth @ 400 kHz Offset = –62 dBc

Spectral Regrowth @ 600 kHz Offset = –78 dBc

EVM: 1.5% rms

**GSM Application**

* Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band 920-960 MHz

Drain Efficiency: 63%

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

## Features