MRF6V2010NR1

晶体管, 射频FET, 110 VDC, 10 MHz, 450 MHz, TO-270

Overview

The MRF6V2010N, MRF6V2010GN and MRF6V2010NB are designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

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## Features

* Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W

Power gain: 23.9 dB

Drain efficiency: 62%

* Capable of handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 W CW output power

* Characterized with series equivalent large-signal impedance parameters

* Qualified Up to a maximum of 50 VDD operation

* Integrated ESD protection

* 225°C capable plastic package

* RoHS compliant

## Features