MRF6V2150NR1

晶体管, 射频FET, 110 V, 450 MHz, 10 MHz, TO-270WB

Overview

The and MRF6V2150NBR1 are designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

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## Features

* Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts

Power Gain: 25 dB

Drain Efficiency: 68.3%

* Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts Output Power

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

**NOTE: PARTS ARE SINGLE–ENDED**

## Features

**NOTE: PARTS ARE SINGLE–ENDED**