MRFE6S9045NR1

晶体管, 射频FET, 66 VDC, 865 MHz, 960 MHz, TO-270

Overview

The is designed for broadband commercial and industrial applications with frequencies from 865 to 960 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

MoreLess

## Features

* Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain: 22.1 dB

Drain Efficiency: 32%

ACPR @ 750 kHz Offset: –46 dBc in 30 kHz Bandwidth

* Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness

**GSM EDGE Application**

* Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band 920–960 MHz

Power Gain: 20 dB

Drain Efficiency: 46%

Spectral Regrowth @ 400 kHz Offset = –62 dBc

Spectral Regrowth @ 600 kHz Offset = –78 dBc

EVM: 1.5% rms

**GSM Application**

* Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts, Full Frequency Band 920-960 MHz

Drain Efficiency: 68%

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

## Features