MRFE6VS25NR1

晶体管, 射频FET, 133 VDC, 1.8 MHz, 2000 MHz, TO-270

Overview

and MRFE6VS25GNR1 are RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.

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## Features

* Wide Operating Frequency Range

* Extreme Ruggedness

* Unmatched, Capable of Very Broadband Operation

* Integrated Stability Enhancements

* Low Thermal Resistance

* Extended ESD Protection Circuit

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

* These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

## Features RF Performance Tables

### VHF-UHF Performance

VDD = 50 Volts

.

*Frequency

MHz

.

* | **Signal Type** | **Pout

W

.

* | **Gps

dB

.

* | **ηD

%

.

* | **IMD

dBc

.

*

\---|---|---|---|---|---

1.8 to 30| Two-Tone

10 kHz spacing| 25 PEP| 25| 51| –30

30-512| Two-Tone

200 kHz spacing| 25 PEP| 17.1| 30.1| –32

### 512 MHz Narrowband, 1030 MHz Narrowband

VDD = 50 Volts

.

*Frequency

MHz

.

* | **Signal Type** | **Pout

W

.

* | **Gps

dB

.

* | **ηD

%

.

*

\---|---|---|---|---

512| Pulse 100 µsec,

20% Duty Cycle| 25 Peak| 25.4| 74.5

512| CW| 25| 25.5| 74.7

1030| CW| 25| 22.5| 60

### Ruggedness, 1030 MHz

**Frequency

MHz

.

* | **Signal Type** | **VSWR** | **Pin

W

.

* | **Test

Voltage

.

* | **Result**

\---|---|---|---|---|---

1030| CW| >65:1

at all Phase

Angles| 0.34

3 dB

Overdrive| 50| No

Device

Degradation