晶体管, 射频FET, 40 V, 4 A, 62.5 W, 450 MHz, 520 MHz, PLD-1.5
Overview
The is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment.
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## Features
* Specified Performance @ 520 MHz, 12.5 Volts
Output Power: 8 Watts
Power Gain: 13 dB
Efficiency: 60%
* Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive
* Excellent Thermal Stability
* Characterized with Series Equivalent Large–Signal Impedance Parameters
* N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
* In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
## Features
频率 520 MHz
额定电流 4 A
无卤素状态 Halogen Free
针脚数 3
极性 N-Channel
耗散功率 62.5 W
漏源极电压Vds 40 V
连续漏极电流Ids 4.00 mA
输出功率 8 W
增益 13 dB
测试电流 150 mA
输入电容Ciss 66pF @12.5VVds
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 62500 mW
额定电压 40 V
安装方式 Surface Mount
引脚数 3
封装 PLD-1
封装 PLD-1
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Contains Lead
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MRF1518NT1 NXP 恩智浦 | 当前型号 | 当前型号 |
MRF1518T1 恩智浦 | 功能相似 | MRF1518NT1和MRF1518T1的区别 |
F1518 恩智浦 | 功能相似 | MRF1518NT1和F1518的区别 |