MW6S010NR1

射频FET晶体管, 68 V, 450 MHz, 1.5 GHz, TO-270

Overview

The and MW6S010GNR1 are designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

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## Features

* Typical Two-Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP

Power Gain: 18 dB

Drain Efficiency: 32%

IMD: –37 dBc

* Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power

* Characterized with Series Equivalent Large–Signal Impedance Parameters

* On-Chip RF Feedback for Broadband Stability

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant.

* In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

## Features