MUBW30-12A6K

分立半导体模块 30 Amps 1200V

IGBT 模块 NPT 三相反相器，带制动器 底座安装 E1

得捷:
IGBT MODULE 1200V 30A 130W E1

贸泽:
分立半导体模块 30 Amps 1200V

艾睿:
Use the MUBW30-12A6K infineon IGBT module from Ixys Corporation when working with an electronic switch. Its maximum power dissipation is 130000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 125 °C. It is made in a hex configuration.

Verical:
Trans IGBT Module N-CH 1200V 30A 130000mW 25-Pin