MII300-12A4

Trans IGBT Module N-CH 1200V 330A 1380000mW 7Pin Y3-DCB

IGBT 模块 NPT 半桥 底座安装 Y3-DCB

得捷:
IGBT MOD 1200V 330A 1380W Y3DCB

贸泽:
Discrete Semiconductor Modules IGBT MODULE 1200V,300A

艾睿:
This MII300-12A4 infineon IGBT module from Ixys Corporation is an electronic switch that can handle large currents with little to zero gate current drive. Its maximum power dissipation is 1380000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a dual configuration. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 150 °C.