MUBW10-12A7概述
Trans IGBT Module N-CH 1200V 20A 105000mW 24Pin E2-Pack
You can use this infineon IGBT module from Ixys Corporation with your electronic switch. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 105000 mW. It is made in a hex configuration. This IGBT driver board has an operating temperature range of -40 °C to 125 °C.
得捷:
IGBT MODULE 1200V 20A 105W E2
艾睿:
Trans IGBT Module N-CH 1.2KV 20A 24-Pin E2-Pack
MUBW10-12A7中文资料参数规格
MUBW10-12A7引脚图与封装图 
在线购买MUBW10-12A7
型号： MUBW10-12A7
制造商：
IXYS Semiconductor
描述：Trans IGBT Module N-CH 1200V 20A 105000mW 24Pin E2-Pack
替代型号MUBW10-12A7
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MUBW10-12A7 IXYS Semiconductor | 当前型号 | 当前型号 |
MUBW15-12A7 IXYS Semiconductor | 类似代替 | MUBW10-12A7和MUBW15-12A7的区别 |