Trans IGBT Module N-CH 1200V 135A 560000mW 7Pin Y4-M5
This infineon IGBT module from Ixys Corporation will be able to handle large currents while still performing. Its maximum power dissipation is 560000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 150 °C. It is made in a single configuration.
得捷:
IGBT MODULE 1200V 135A 560W Y4M5
贸泽:
IGBT Modules 100 Amps 1200V
艾睿:
This MDI100-12A3 infineon IGBT module from Ixys Corporation will be able to handle large currents while still performing. Its maximum power dissipation is 560000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 150 °C. It is made in a single configuration.
富昌:
1200V,100A IGBT NPT, Y4-M5
Verical:
Trans IGBT Module N-CH 1200V 135A 560000mW 7-Pin Y4-M5