对于标准清晰度CRT显示器高压NPN功率晶体管 High voltage NPN Power transistor for standard Definition CRT display
Description
The is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency
bringing updated performance to the Horizontal Deflection stage.
Features
■ State-of-the-art technology:
– Diffused collector “Enhanced generation”
■ Stable performances versus operating temperature variation
■ Low base-drive requirements
■ Tight hFE range at operating collector current
■ Fully insulated power package U.L. compliant
Applications
■ Horizontal deflection output for TV
■ Switch mode power supplies for CRT TV
极性 NPN
耗散功率 57000 mW
击穿电压集电极-发射极 700 V
集电极最大允许电流 10A
额定功率Max 57 W
工作温度Max 150 ℃
工作温度Min 65 ℃
耗散功率Max 57 W
安装方式 Through Hole
引脚数 3
封装 ISOWATT-218FX-3
长度 26.7 mm
宽度 15.7 mm
高度 14.7 mm
封装 ISOWATT-218FX-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MD1802FX ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
MD2001FX 意法半导体 | 类似代替 | MD1802FX和MD2001FX的区别 |
BUL381D 意法半导体 | 功能相似 | MD1802FX和BUL381D的区别 |
BUL89 意法半导体 | 功能相似 | MD1802FX和BUL89的区别 |