RF Power Transistor,700 to 1300MHz, 350W, Typ Gain in dB is 20.7 @ 915MHz, 50V, LDMOS, SOT1825
Overview
These 350 W CW transistors, MRF8VP13350N and MRF8VP13350GN, are designed for industrial, scientific and medical ISM applications in the 700 to 1300 MHz frequency range. The transistors are capable of 350 W CW or pulse power in narrowband operation.
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## Features
* Internally input matched for ease of use
* Device can be used single-ended or in a push-pull configuration
* Qualified up to a maximum of 50 VDD operation
* Suitable for linear application with appropriate biasing
* Integrated ESD protection
* RoHS Compliant
**Typical Applications**
* 915 MHz industrial heating/welding systems
* 1300 MHz particle accelerators
* 900 MHz TETRA base stations
## Features RF Performance Tables
### 1300 MHz
VDD = 50 Vdc\---|---|---|---|---
13001| Pulse
100 µsec, 20% Duty Cycle| 19.2| 58.0| 350 Peak
### 915 MHz
In 915 MHz reference circuit, VDD = 48 Vdc\---|---|---|---|---
915| CW| 20.7| 67.5| 355
### Load Mismatch/Ruggedness
**Frequency
MHz\---|---|---|---|---|---
13001 | Pulse
100 µsec,
20% Duty Cycle | > 20:1 at all
Phase Angles | 9.6 Peak
3 dB Overdrive | 50 | No Device
Degradation
1\\. Measured in 1300 MHz pulse narrowband test circuit.