MRFE6VP61K25HR6

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MRFE6VP61K25HR6概述

晶体管, 射频FET, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230

Overview

These high ruggedness devices, MRFE6VP61K25H, MRFE6VP61K25HS and MRFE6VP61K25GS, are designed for use in high VSWR industrial including laser and plasma exciters, broadcast analog and digital, aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

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## Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Device can be used Single-Ended or in a Push-Pull Configuration

* Qualified Up to a Maximum of 50 VDD Operation

* Characterized from 30 V to 50 V for Extended Power Range

* Suitable for Linear Application with Appropriate Biasing

* Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* RoHS Compliant

* In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.

* These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.

**NOTE: PARTS ARE PUSH–PULL**

## Features

**NOTE: PARTS ARE PUSH–PULL**RF Performance Tables

### Typical Narrowband Performance

VDD = 50 Volts, IDQ = 100 mA
.
*Signal Type** | **Pout
W
.
* | **f
MHz
.
* | **Gps
dB
.
* | **ηD
%
.
*

\---|---|---|---|---

Pulse

100 µsec, 20% Duty Cycle | 1250 Peak| 230| 24.0| 74.0

CW | 1250 CW| 230| 22.9| 74.6

### Application Circuits — Typical Performance

**Frequency

MHz
.
* | **Signal Type** | **Pout
W
.
* | **Gps
dB
.
* | **ηD
%
.
*

\---|---|---|---|---

27| CW| 1300| 27| 81

40| CW| 1300| 26| 85

81.36| CW| 1250| 27| 84

87.5-108| CW| 1100| 24| 80

144-148| CW| 1250| 26| 78

170-230| DVBT| 225| 25| 30

352| Pulse

200 µsec,

20% Duty Cycle| 1250| 21.5| 66

352| CW| 1150| 20.5| 68

500| CW| 1000| 18| 58

### Load Mismatch/Ruggedness

**Frequency

MHz
.
* | **Signal Type** | **VSWR** | **Pout
W
.
* | **Test
Voltage
.
* | **Result**

\---|---|---|---|---|---

230 | Pulse

100 µsec,

20% Duty Cycle | >65:1 at all

Phase Angles | 1500 Peak

3 dB Overdrive | 50 | No Device

Degradation

MRFE6VP61K25HR6中文资料参数规格
技术参数

频率 230 MHz

无卤素状态 Halogen Free

针脚数 4

耗散功率 1.333 kW

输出功率 1250 W

增益 24 dB

测试电流 100 mA

输入电容Ciss 562pF @50VVds

工作温度Max 225 ℃

工作温度Min -55 ℃

额定电压 133 V

电源电压 50 V

封装参数

安装方式 Surface Mount

引脚数 5

封装 NI-1230

外形尺寸

封装 NI-1230

物理参数

工作温度 -65℃ ~ 225℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MRFE6VP61K25HR6
型号: MRFE6VP61K25HR6
制造商: NXP 恩智浦
描述:晶体管, 射频FET, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230
替代型号MRFE6VP61K25HR6
型号/品牌 代替类型 替代型号对比

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