MRF6S18060NR1

Trans RF MOSFET N-CH 68V 5Pin TO-270W T/R

Overview

The and MRF6S18060NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

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## Features

**GSM Application**

* Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, f = 1990 MHz

Power Gain: 15 dB

Drain Efficiency: 50%

**GSM EDGE Application**

* Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band 1805–1880 MHz or 1930–1990 MHz

Power Gain: 15.5 dB

Spectral Regrowth @ 400 kHz Offset = –62 dBc

Spectral Regrowth @ 600 kHz Offset = –76 dBc

EVM: 2% rms

* Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power

* Characterized with Series Equivalent Large–Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 225°C Capable Plastic Package

* N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

* In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

## Features