MRF6VP2600HR6

Lateral N-Channel Broadband RF Power MOSFET, 2-500MHz, 600W, 50V

Overview

The is designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

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## Features

* Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.

Power Gain: 25 dB

Drain Efficiency: 28.5%

ACPR @ 4 MHz Offset: –61 dBc @ 4 kHz Bandwidth

* Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 µsec, Duty Cycle = 20%

Power Gain: 25.3 dB

Drain Efficiency: 59%

* Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 µsec, Duty Cycle = 20%

* Characterized with Series Equivalent Large–Signal Impedance Parameters

* CW Operation Capability with Adequate Cooling

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* Designed for Push-Pull Operation

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* RoHS Compliant

* In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

**NOTE: PART IS PUSH–PULL**

## Features

**NOTE: PART IS PUSH–PULL**