RF Power Transistor,920 to 960MHz, 326W, Typ Gain in dB is 19.4 @ 960MHz, 28V, LDMOS, SOT1829
Overview
The MRF8P9300HR6 and are designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
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## Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* Optimized for Doherty Applications
* RoHS Compliant
* In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13-inch Reel.
## Features RF Performance Tables
### 900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.\---|---|---|---|---
920 MHz| 19.6| 35.4| 6.0| –37.3
940 MHz| 19.6| 35.6| 6.0| –37.1
960 MHz| 19.4| 35.8| 5.9| –36.7
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW Output Power 3 dB Input Overdrive from Rated Pout, Designed for Enhanced Ruggedness
* Typical Pout @ 1 dB Compression Point ≃ 326 Watts CW
### 800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.\---|---|---|---|---
865 MHz| 20.5| 35.2| 6.0| –36.1
880 MHz| 20.7| 36.0| 6.0| –36.1
895 MHz| 20.6| 37.0| 6.0| –35.8
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MRF8P9300HSR6 NXP 恩智浦 | 当前型号 | 当前型号 |
MRF8P9300HR6 恩智浦 | 完全替代 | MRF8P9300HSR6和MRF8P9300HR6的区别 |
P930 恩智浦 | 功能相似 | MRF8P9300HSR6和P930的区别 |