RF Power Transistor,865 to 960MHz, 120W, Typ Gain in dB is 19.8 @ 960MHz, 28V, LDMOS, SOT1823
Overview
The is designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
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## Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* Optimized for Doherty Applications
* 225°C Capable Plastic Package
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13-inch Reel.
## Features RF Performance Tables
### 900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- *
\---|---|---|---|---
920 MHz| 20.1| 34.6| 6.3| –37.2
940 MHz| 20.0| 34.3| 6.3| –37.3
960 MHz| 19.8| 34.2| 6.3| –37.4
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 120 Watts CW Output Power 3 dB Input Overdrive from Rated Pout, Designed for Enhanced Ruggedness
* Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW
### 800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- *
\---|---|---|---|---
865 MHz| 20.8| 35.0| 6.2| –37.1
880 MHz| 20.8| 35.0| 6.2| –37.5
895 MHz| 20.6| 34.8| 6.2| –38.0