MRF7S24250NR3

MRF7S24250NR3图片1
MRF7S24250NR3概述

RF Power Transistor,2400 to 2500MHz, 250W, Typ Gain in dB is 14.7 @ 2450MHz, 32V, LDMOS, SOT1823

Overview

The MRF7S24250N 250 W CW RF power transistor is designed for industrial, scientific, medical ISM and industrial heating applications at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency rugged device is targeted to replace industrial magnetrons and will provide longer life and easier servicing.

MoreLess

## Features

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified up to a Maximum of 32 VDD Operation

* Integrated High Performance ESD Protection

* Supported by the RF Power Tool

* RoHS Compliant

#### Typical Applications

* Industrial Heating and Drying

* Material Welding

* Plasma Lighting

* Scientific

* Medical: Skin Treatment, Blood Therapy, Electrosurgery

## Features RF Performance Tables

### Typical Performance

In 2400–2500 MHz reference circuit, VDD = 32 Vdc
.
*Frequency
MHz
.
* | **Signal Type** | **Pin
W
.
* | **Gps
dB
.
* | **ηD
%
.
* | **Pout
W
.
*

\---|---|---|---|---|---

2400| CW| 9.0| 14.5| 55.5| 255

2450| 9.0| 14.7| 54.8| 263

2500| 9.0| 14.3| 55.5| 242

### Load Mismatch/Ruggedness

**Frequency

MHz
.
* | **Signal Type** | **VSWR** | **Pin
W
.
* | **Test
Voltage
.
* | **Result**

\---|---|---|---|---|---

2450| CW| > 10:1

at all Phase Angles| 14

3 dB Overdrive| 32| No Device

Degradation

MRF7S24250NR3中文资料参数规格
技术参数

频率 2.45 GHz

输出功率 256 W

增益 14.7 dB

测试电流 100 mA

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 769 mW

额定电压 65 V

电源电压 32 V

封装参数

安装方式 Surface Mount

引脚数 3

封装 OM-780-2

外形尺寸

封装 OM-780-2

物理参数

工作温度 -40℃ ~ 225℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买MRF7S24250NR3
型号: MRF7S24250NR3
制造商: NXP 恩智浦
描述:RF Power Transistor,2400 to 2500MHz, 250W, Typ Gain in dB is 14.7 @ 2450MHz, 32V, LDMOS, SOT1823

 锐单商城 - 一站式电子元器件采购平台  

 深圳锐单电子有限公司