MRFE6S9125NBR1

RF Power Transistor,865 to 960MHz, 125W, Typ Gain in dB is 20.2 @ 880MHz, 28V, LDMOS, SOT1735

Overview

The MRFE6S9125NR1 and are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

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## Features

**N-CDMA Application**

* Typical Single-Carrier N-CDMA Performance @ 800 MHz, VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain: 20.2 dB

Drain Efficiency: 31%

ACPR @ 750 kHz Offset: –45.7 dBc in 30 kHz Bandwidth

* Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness.

**GSM EDGE Application**

* Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700mA, Pout = 60 Watts Avg., Full Frequency Band 865-960 MHz or 920-960 MHz

Power Gain: 20 dB

Drain Efficiency: 40%

Spectral Regrowth @ 400 kHz Offset = –63 dBc

Spectral Regrowth @ 600 kHz Offset = –78 dBc

EVM: 1.8% rms

**GSM Application**

* Typical GSM Performance: VDD = 28 Volts, IDQ = 700mA, Pout = 125 Watts, Full Frequency Band 920-960 MHz

Power Gain: 19 dB

Drain Efficiency: 62%

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

## Features