MMRF1305HSR5概述
RF Power Transistor,1.8 to 2000MHz, 100W, Typ Gain in dB is 27.2 @ 512MHz, 50V, LDMOS, SOT1826
RF Mosfet LDMOS（双） 50 V 100 mA 512MHz 26dB 100W NI-780S-4
得捷:
FET RF 2CH 133V 512MHZ NI780S-4
艾睿:
Trans RF MOSFET N-CH 133V 5-Pin NI-780S T/R
RfMW:
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1826