RF Power Transistor,10 to 600MHz, 300W, Typ Gain in dB is 25.5 @ 220MHz, 50V, LDMOS, SOT1736
Overview
The MRF6V2300NR1 and MRF6V2300NBR1 are designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
MoreLess
## Features
* Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHz
Power Gain: 25.5 dB
Drain Efficiency: 68%
* Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power
* Characterized with Series Equivalent Large-Signal Impedance Parameters
* Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* 225°C Capable Plastic Package
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
**NOTE: PARTS ARE SINGLE–ENDED**
## Features
**NOTE: PARTS ARE SINGLE–ENDED**
频率 220 MHz
额定电流 2.5 mA
无卤素状态 Halogen Free
输出功率 300 W
增益 25.5 dB
测试电流 900 mA
输入电容Ciss 268pF @50VVds
工作温度Max 225 ℃
工作温度Min -65 ℃
额定电压 110 V
电源电压 50 V
安装方式 Surface Mount
引脚数 5
封装 TO-270-4
封装 TO-270-4
工作温度 -65℃ ~ 225℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MRF6V2300NR5 NXP 恩智浦 | 当前型号 | 当前型号 |
MRF6V2300NR1 恩智浦 | 功能相似 | MRF6V2300NR5和MRF6V2300NR1的区别 |