MMRF1014NT1概述
晶体管, 射频FET, 68 V, 2 GHz, 1 MHz, PLD-1.5
RF Mosfet LDMOS 28V 50mA 1.96GHz 18dB 4W PLD-1.5
得捷:
FET RF 68V 1.96GHZ PLD-1.5
立创商城:
MMRF1014NT1
贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 1-2000 MHz, 4 W, 28 V
e络盟:
晶体管, 射频FET, 68 V, 2 GHz, 1 MHz, PLD-1.5
艾睿:
Trans RF MOSFET N-CH 68V 4-Pin T/R
RfMW:
RF Power Transistor,1 to 2000 MHz, 4 W, Typ Gain in dB is 18 @ 1960 MHz, 28 V, LDMOS, SOT1811