RF Power Transistor,470 to 860MHz, - W, Typ Gain in dB is 20 @ 810MHz, 50V, LDMOS, SOT1787
Overview
The MRFE8VP8600H and MRFE8VP8600HS high power transistors are designed for use in UHF TV broadcast applications. The devices have an integrated input matching network for better power distribution and are ideal for use in both analog and digital TV transmitters.
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## Features
* Excellent thermal characteristics
* High gain for reduced PA size
* High efficiency for Class AB and Doherty operations
* Integrated input matching and unmatched output
* Extended negative gate-gource voltage range of -6 Vdc to +10 Vdc
* RoHS compliant
## Features RF Performance Tables
### DBV-T Broadband Class AB Performance
VDD = 50 Vdc, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.- .
- *Signal Type** | **Pout
- .
- * | **f
- .
- * | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- *
\---|---|---|---|---|---
DVB-T 8k OFDM | 140 Avg. | 474| 20.2| 29.7| 8.9
610| 20.7| 34.5| 8.2
810| 20.0| 34.0| 8.4
### Load Mismatch/Ruggedness
**Frequency
MHz- .
- * | **Signal Type** | **VSWR** | **Pout
- .
- * | **Test
- .
- * | **Result**
\---|---|---|---|---|---
860 | DVB-T 8k OFDM | 20:1 at all
Phase Angles | 125
3 dB Overdrive | 50 | No Device
Degradation