MMRF1004GNR1概述
射频金属氧化物半导体场效应RF MOSFET晶体管 MOSFET 1600-2200 MHz 10 W 28 V
RF Mosfet LDMOS 28 V 130 mA 2.17GHz 15.5dB 10W TO-270-2 鸥翼型
得捷:
FET RF 68V 2.17GHZ TO270G-2
贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 MOSFET 1600-2200 MHz 10 W 28 V
艾睿:
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
安富利:
Trans MOSFET N-CH 68V 2-Pin TO-270G T/R
RfMW:
RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1731