MRFE6VP61K25NR6

MRFE6VP61K25NR6概述

晶体管, 射频FET, 133 V, 3.333 kW, 1.8 MHz, 600 MHz, OM-1230

Overview

These high ruggedness devices, MRFE6VP61K25N and MRFE6VP61K25GN, are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.

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## Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Device can be used Single-Ended or in a Push-Pull Configuration

* Qualified Up to a Maximum of 50 VDD Operation

* Characterized from 30 to 50 V for Extended Power Range

* Suitable for Linear Application with Appropriate Biasing

* Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* RoHS Compliant

* This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.

* Recommended drivers: AFT05MS004N 4 W or MRFE6VS25N 25 W

**Typical Applications**

* Broadcast

* FM broadcast

* HF and VHF broadcast

* Industrial, Scientific, Medical ISM

* CO2 laser generation

* Plasma etching

* Particle accelerators synchrotrons

* MRI

* Industrial heating/welding

* Aerospace

* VHF omnidirectional range VOR

* Weather radar

* Mobile Radio

* HF and VHF communications

* PMR base stations

## Features RF Performance Tables

### Typical Performance

VDD = 50 Vdc
.
*Frequency
MHz
.
* | **Signal Type** | **Pout
W
.
* | **Gps
dB
.
* | **ηD
%
.
*

\---|---|---|---|---

87.5-1081,2| CW| 1309 CW| 24.1| 77.6

2303| Pulse

100 µsec, 20% Duty Cycle| 1250 Peak| 23.0| 72.3

### Load Mismatch/Ruggedness

**Frequency

MHz
.
* | **Signal Type** | **VSWR** | **Pin
W
.
* | **Test
Voltage
.
* | **Result**

\---|---|---|---|---|---

2303 | Pulse

100 µsec,

20% Duty Cycle | > 65:1 at all

Phase Angles | 11.5 Peak

3 dB Overdrive | 50 | No Device

Degradation

1\\. Measured in 87.5-108 MHz broadband reference circuit.

2\\. The values shown are the center band performance numbers across the indicated frequency range.

3\\. Measured in 230 MHz narrowband test circuit.

MRFE6VP61K25NR6中文资料参数规格
技术参数

频率 230 MHz

针脚数 4

耗散功率 3.333 kW

漏源极电压Vds 133 V

输出功率 1250 W

增益 23 dB

测试电流 100 mA

输入电容Ciss 562pF @50VVds

工作温度Max 225 ℃

工作温度Min -40 ℃

耗散功率Max 3333000 mW

额定电压 133 V

电源电压 50 V

封装参数

安装方式 Surface Mount

引脚数 5

封装 OM-1230-4L

外形尺寸

封装 OM-1230-4L

物理参数

工作温度 -40℃ ~ 225℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MRFE6VP61K25NR6
型号: MRFE6VP61K25NR6
制造商: NXP 恩智浦
描述:晶体管, 射频FET, 133 V, 3.333 kW, 1.8 MHz, 600 MHz, OM-1230

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