MRFE6VP6600NR3

MRFE6VP6600NR3图片1
MRFE6VP6600NR3图片2
MRFE6VP6600NR3概述

RF Power Transistor,1.8 to 600MHz, 600W, Typ Gain in dB is 24 @ 98MHz, 50V, LDMOS, SOT1818

Overview

These high ruggedness devices, MRFE6VP6600N and MRFE6VP6600GN, are designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.

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## Features

* Unmatched Input and Output Allowing Wide Frequency Range Utilization

* Device can be used Single-Ended or in a Push-Pull Configuration

* Qualified Up to a Maximum of 50 VDD Operation

* Characterized from 30 to 50 V for Extended Power Range

* Suitable for Linear Application with Appropriate Biasing

* Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Characterized with Series Equivalent Large-Signal Impedance Parameters

* Recommended drivers: AFT05MS004N 4 W or MRFE6VS25N 25 W

* RoHS Compliant

**Typical Applications**

* Broadcast

* FM broadcast

* HF and VHF broadcast

* Industrial, Scientific, Medical ISM

* CO2 laser generation

* Plasma etching

* Particle accelerators synchrotrons

* MRI

* Industrial heating/welding

* Aerospace

* VHF omnidirectional range VOR

* Weather radar

* Mobile Radio

* HF and VHF communications

* PMR base stations

## Features RF Performance Tables

### Typical Performance

VDD = 50 Vdc
.
*Frequency
MHz
.
* | **Signal Type** | **Pout
W
.
* | **Gps
dB
.
* | **ηD
%
.
*

\---|---|---|---|---

87.5-1081,3| CW| 600 CW| 24.0| 81.8

2302| Pulse

100 µsec, 20% Duty Cycle| 600 Peak| 24.7| 73.5

### Load Mismatch/Ruggedness

**Frequency

MHz
.
* | **Signal Type** | **VSWR** | **Pout
W
.
* | **Test
Voltage
.
* | **Result**

\---|---|---|---|---|---

2302 | Pulse

100 µsec,

20% Duty Cycle| > 65:1 at all

Phase Angles | 4.0 Peak

3 dB Overdrive| 50| No Device

Degradation

1\\. Measured in 87.5-108 MHz broadband reference circuit.

2\\. Measured in 230 MHz narrowband production test circuit.

3\\. The values shown are the center band performance numbers across the indicated frequency range.

MRFE6VP6600NR3中文资料参数规格
技术参数

频率 230 MHz

输出功率 600 W

增益 24.7 dB

测试电流 100 mA

输入电容Ciss 290pF @50VVds

工作温度Max 150 ℃

工作温度Min -40 ℃

额定电压 133 V

电源电压 50 V

封装参数

安装方式 Surface Mount

引脚数 5

封装 OM-780

外形尺寸

封装 OM-780

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MRFE6VP6600NR3
型号: MRFE6VP6600NR3
制造商: NXP 恩智浦
描述:RF Power Transistor,1.8 to 600MHz, 600W, Typ Gain in dB is 24 @ 98MHz, 50V, LDMOS, SOT1818

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