RF Power Transistor,1.8 to 600MHz, 600W, Typ Gain in dB is 24 @ 98MHz, 50V, LDMOS, SOT1818
Overview
These high ruggedness devices, MRFE6VP6600N and MRFE6VP6600GN, are designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.
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## Features
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Device can be used Single-Ended or in a Push-Pull Configuration
* Qualified Up to a Maximum of 50 VDD Operation
* Characterized from 30 to 50 V for Extended Power Range
* Suitable for Linear Application with Appropriate Biasing
* Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Characterized with Series Equivalent Large-Signal Impedance Parameters
* Recommended drivers: AFT05MS004N 4 W or MRFE6VS25N 25 W
* RoHS Compliant
**Typical Applications**
* Broadcast
* FM broadcast
* HF and VHF broadcast
* Industrial, Scientific, Medical ISM
* CO2 laser generation
* Plasma etching
* Particle accelerators synchrotrons
* MRI
* Industrial heating/welding
* Aerospace
* VHF omnidirectional range VOR
* Weather radar
* Mobile Radio
* HF and VHF communications
* PMR base stations
## Features RF Performance Tables
### Typical Performance
VDD = 50 Vdc\---|---|---|---|---
87.5-1081,3| CW| 600 CW| 24.0| 81.8
2302| Pulse
100 µsec, 20% Duty Cycle| 600 Peak| 24.7| 73.5
### Load Mismatch/Ruggedness
**Frequency
MHz\---|---|---|---|---|---
2302 | Pulse
100 µsec,
20% Duty Cycle| > 65:1 at all
Phase Angles | 4.0 Peak
3 dB Overdrive| 50| No Device
Degradation
1\\. Measured in 87.5-108 MHz broadband reference circuit.
2\\. Measured in 230 MHz narrowband production test circuit.
3\\. The values shown are the center band performance numbers across the indicated frequency range.